Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film.

Title Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film.
Authors J. Meng; X. Zhang; Y. Wang; Z. Yin; H. Liu; J. Xia; H. Wang; J. You; P. Jin; D. Wang; X.M. Meng
Journal Small
DOI 10.1002/smll.201604179
Abstract

Atomically thin hexagonal boron nitride (h-BN) is gaining significant attention for many applications such as a dielectric layer or substrate for graphene-based devices. For these applications, synthesis of high-quality and large-area h-BN layers with few defects is strongly desirable. In this work, the aligned growth of millimeter-size single-crystal h-BN domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition is demonstrated. Under the optimized growth conditions, single-crystal h-BN domains up to 0.6 mm in edge length are obtained, the largest reported to date. The formation of large-size h-BN domains results mainly from the reduced Ni-grain boundaries and the improved crystallinity of Ni film. Furthermore, the h-BN domains show well-aligned orientation and excellent dielectric properties. In addition, the sapphire substrates can be repeatedly used with almost no limit. This work provides an effective approach for synthesizing large-scale high-quality h-BN layers for electronic applications.

Citation J. Meng; X. Zhang; Y. Wang; Z. Yin; H. Liu; J. Xia; H. Wang; J. You; P. Jin; D. Wang; X.M. Meng.Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film.. Small. 2017;13(18). doi:10.1002/smll.201604179

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