All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

Title All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).
Authors J. Kwoen; B. Jang; J. Lee; T. Kageyama; K. Watanabe; Y. Arakawa
Journal Opt Express
DOI 10.1364/OE.26.011568
Abstract

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

Citation J. Kwoen; B. Jang; J. Lee; T. Kageyama; K. Watanabe; Y. Arakawa.All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).. Opt Express. 2018;26(9):1156811576. doi:10.1364/OE.26.011568

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