Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.

Title Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.
Authors A. Abliz; Q. Gao; D. Wan; X. Liu; L. Xu; C. Liu; C. Jiang; X. Li; H. Chen; T. Guo; J. Li; L. Liao
Journal ACS Appl Mater Interfaces
DOI 10.1021/acsami.6b15275
Abstract

Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (?-IGZO) TFTs. The performance and bias stress stability of ?-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.3 cm(2)/(V s) and small shifts of threshold voltage (Vth). On the basis of X-ray photoelectron spectroscopy analysis, the improved electrical performances of ?-IGZO TFT should be attributed to the appropriate amount of N/H codoping, which could not only control the Vth and carrier concentration efficiently, but also passivate the defects such as oxygen vacancy due to the formation of stable Zn-N and N-H bonds. Meanwhile, low-frequency noise analysis indicates that the average trap density near the ?-IGZO/SiO2 interface is reduced by the nitrogen and hydrogen plasma treatment. This method could provide a step toward the development of ?-IGZO TFTs for potential applications in next-generation high-definition optoelectronic displays.

Citation A. Abliz; Q. Gao; D. Wan; X. Liu; L. Xu; C. Liu; C. Jiang; X. Li; H. Chen; T. Guo; J. Li; L. Liao.Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.. ACS Appl Mater Interfaces. 2017;9(12):1079810804. doi:10.1021/acsami.6b15275

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