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Gallium Manganese Alloy Sputtering Target

CAS #:

12186-68-4

Linear Formula:

Ga/Mn

MDL Number:

N/A

EC No.:

N/A

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PRODUCT	Product Code	ORDER	SAFETY DATA	TECHNICAL DATA
Gallium Manganese Alloy Sputtering Target	GA-MN-01-ST	Pricing >	SDS >	Data Sheet >

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Gallium Manganese Alloy Sputtering Target Properties (Theoretical)

Compound Formula	Ga/Mn
Molecular Weight	123.86
Appearance	Target
Melting Point	N/A
Boiling Point	N/A
Density	N/A
Solubility in H2O	N/A
Exact Mass	123.86362 g/mol

About Gallium Manganese Alloy Sputtering Target

American Elements specializes in producing high purity Gallium Manganese Alloy Sputtering Targets with the highest possible density

High Purity (99.99%) Gallium Manganese Alloy Sputtering Target

and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard sputtering targets for thin film deposition are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Rotary (cylindrical), round, rectangular, square, ring, annular, oval, "dog-bone" and other shaped targets are available in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please request a quote above for more information on lead time and pricing.

Gallium Manganese Alloy Sputtering Target Synonyms

GaMn, MnGa

Chemical Identifiers

Linear Formula	Ga/Mn
MDL Number	N/A
EC No.	N/A
Pubchem CID	60208693
IUPAC Name	gallium; manganese
SMILES	[Mn].[Ga]
InchI Identifier	InChI=1S/Ga.Mn
InchI Key	VFLRPJJARDQRAC-UHFFFAOYSA-N

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Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

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Related Elements

Gallium

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See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d¹⁰ 4s² 4p¹. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr Model Gallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental Gallium Gallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia' referring to Gaul, the old name of France.

Manganese

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