High-? Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

Title High-? Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.
Authors K.N. Woods; T.H. Chiang; P.N. Plassmeyer; M.G. Kast; A.C. Lygo; A.K. Grealish; S.W. Boettcher; C.J. Page
Journal ACS Appl Mater Interfaces
DOI 10.1021/acsami.7b00915
Abstract

Metal oxide thin films are critical components in modern electronic applications. In particular, high-? dielectrics are of interest for reducing power consumption in metal-insulator-semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (La2Zr2O7, LZO) dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with subnanometer roughness. Dielectric constants of 12.2-16.4 and loss tangents <0.6% were obtained for MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents <10(-7) A cm(-2) at 4 MV cm(-1) were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities makes these LZO dielectrics promising candidates for thin-film transistor devices.

Citation K.N. Woods; T.H. Chiang; P.N. Plassmeyer; M.G. Kast; A.C. Lygo; A.K. Grealish; S.W. Boettcher; C.J. Page.High-? Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.. ACS Appl Mater Interfaces. 2017;9(12):1089710903. doi:10.1021/acsami.7b00915

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Lanthanum

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