Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

Title Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.
Authors R. Hristu; S.G. Stanciu; D.E. Tranca; E.K. Polychroniadis; G.A. Stanciu
Journal Sci Rep
DOI 10.1038/s41598-017-05010-y
Abstract

Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

Citation R. Hristu; S.G. Stanciu; D.E. Tranca; E.K. Polychroniadis; G.A. Stanciu.Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.. Sci Rep. 2017;7(1):4870. doi:10.1038/s41598-017-05010-y

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Silicon

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

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