Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

Title Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Authors K.Yup Shin; Y.Jun Tak; W.G. Kim; S. Hong; H.Jae Kim
Journal ACS Appl Mater Interfaces
DOI 10.1021/acsami.7b00257
Abstract

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (?FE) from 11.72 ± 1.14 to 20.68 ± 1.94 cm(2)/(V s), threshold voltage (Vth) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (Ion/off) from (5.31 ± 2.19) × 10(7) to (4.79 ± 1.54) × 10(8) compared to a-IGZO TFTs without PVLs, respectively. The Vth shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Citation K.Yup Shin; Y.Jun Tak; W.G. Kim; S. Hong; H.Jae Kim.Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.. ACS Appl Mater Interfaces. 2017;9(15):1327813285. doi:10.1021/acsami.7b00257

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