Multi-functional spintronic devices based on boron- or aluminum-doped silicene nanoribbons.

Title Multi-functional spintronic devices based on boron- or aluminum-doped silicene nanoribbons.
Authors Y.S. Liu; Y.J. Dong; J. Zhang; H.L. Yu; J.F. Feng; X.F. Yang
Journal Nanotechnology
DOI 10.1088/1361-6528/aaa999
Abstract

Zigzag silicene nanoribbons (ZSiNRs) in the ferromagnetic edge ordering have a metallic behavior, which limits their applications in spintronics. Here a robustly half-metallic property is achieved by the boron substitution doping at the edge of ZSiNRs. When the impurity atom is replaced by the aluminum atom, the doped ZSiNRs possess a spin semiconducting property. Its band gap is suppressed with the increase of ribbon's width, and a pure thermal spin current is achieved by modulating ribbon's width. Moreover, a negative differential thermoelectric resistance in the thermal charge current appears as the temperature gradient increases, which originates from the fact that the spin-up and spin-down thermal charge currents have diverse increasing rates at different temperature gradient regions. Our results put forward a promising route to design multi-functional spintronic devices which may be applied in future low-power-consumption technologies.

Citation Y.S. Liu; Y.J. Dong; J. Zhang; H.L. Yu; J.F. Feng; X.F. Yang.Multi-functional spintronic devices based on boron- or aluminum-doped silicene nanoribbons.. Nanotechnology. 2018;29(12):125201. doi:10.1088/1361-6528/aaa999

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Boron

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